Small Signal MOSFETs | FDS2572

N 沟道，UltraFET® Trench MOSFET，150V，4.9A，47mΩ

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概览

UltraFET® 器件结合了各种特性，可在电源转换应用中提供标杆式效率。此类器件针对 Rds(on)、低 ESR、低总电荷和 Miller 门极电荷而优化，适用于高频 DC/DC 转换器。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Telecom and Data-Com Distributed Power Architectures
  • 48-volt I/P Half-bridge/Full-Bridge
  • 24-volt Forward and Push-Pull Topologies
  • RDS(ON) = 0.040 Ω（典型值），V
    = 10 V
  • Qg(tot) = 29nC（典型值），VGS = 10V
  • 低 QRR体二极管
  • 已将高频情况下的效率最大化
  • UIS 额定值

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS2572

Contact Sales

Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

150

47

±20

4

4.9

2.5

-

-

-

4

2050

6

158

220

48

$0.7333

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