Small Signal MOSFETs | FDS6679AZ

P 沟道，PowerTrench® MOSFET，-30V，-13A，9mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的电源管理和负载开关应用。

  • This product is general usage and suitable for many different applications.
  • VGS = -10V，ID = -13A时，rDS(on) = 9.3 mΩ（最大值）
  • VGS = -4.5V，ID = -11A时，rDS(on) = 14.8 mΩ（最大值）
  • 扩展了VGS范围(-25V)，适合电池应用
  • HBM静电放电保护等级，典型值为6KV（注3）
  • 高性能沟道技术可实现极低的RDS(on)
  • 高功率和高电流处理能力
  • 高功率和高电流处理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6679AZ

Contact Sales

Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

9.3

25

-3

-13

2.5

-

14.8

12

38

2890

-

-

-

-

$0.376

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