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此互补(N 和 P 沟道)器件使用小占地面积封装和安森美半导体领先的 RDS(on) 技术,可提高电路效率。 该性能适用于便携式或手持式应用。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTHC5513T1G
Last Shipments
Pb
A
H
P
ChipFET-8
1
260
REEL
3000
N
Complementary
PowerTrench® T1
CHIPFET-8
Small Signal
Logic
0
NA
0
±20
-
12
1.2
2.9
1.1
N:80.0, P: 200.0
N:60.0, P: 130.0
2.3
6
N: 180, P: 185
0.7
6
80
25
Price N/A
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