Small Signal MOSFETs | RFP50N06

N 沟道，功率 MOSFET，60V，50A，22mΩ

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概览

此类 N 沟道功率 MOSFET 是使用 MegaFET 工艺生产的。此工艺使用接近 LSI 集成电路的特性尺寸，可实现硅的优化利用，因此性能非常出色。此类器件适用于开关稳压器、开关转换器、电机驱动器和继电器驱动器等应用。此类晶体管可直接在集成电路中运行。之前的开发型号为 TA09526。

  • 其他工业

  • 50A, 60V
  • rDS(ON)= 0.022Ω
  • 温度补偿式PSPICE®模型
  • 峰值电流与脉宽曲线
  • UIS额定值曲线
  • 175°C工作温度

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

RFP50N06

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

60

22

±20

4

50

131

-

-

-

67

2020

-

-

600

200

$0.9978

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可靠性数据

Die Related Summary Data

Device: RFP50N06

Equivalent to wafer fab process: U2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U2

0

3282858009

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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