Si/SiC Hybrid Modules | NXH240B120H3Q1

电源集成模块 (PIM) 3 沟道，1200 V IGBT + SiC 升压，80 A IGBT 和 20 A SiC 二极管

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NXH240B120H3Q1PG 是一款 3 沟道 1200 V IGBT + SiC 升压模块。每个沟道由一个快速开关 80 A IGBT、一个 20 A SiC 二极管、一个旁通二极管和一个 IGBT 保护二极管组成。该模块具有内置的热敏电阻和压接引脚。

  • Solar Inverter Boost Stage

  • Decentralized Utility-Scale Solar Inverter
  • Commercial String Inverter

  • 1200 V Fast Switching IGBTs
  • 1200 SiC Diodes
  • Low Vf bypass diodes
  • Press-fit pins

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NXH240B120H3Q1PG

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CAD Model

Pb

A

H

P

Q1

180AX

NA

0

BTRAY

21

Y

3 Channel Boost

1200

80

1.65

1.48

$66.9859

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NXH240B120H3Q1SG

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Pb

A

H

P

Q1

180AD

NA

-

BTRAY

21

N

3 Channel Boost

1200

80

1.65

1.48

Price N/A

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Die Related Summary Data

Device: NXH240B120H3Q1PG

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

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SIC

0

3855921070

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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