Silicon Carbide (SiC) Modules | NXH004P120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Active

数据表

产品

相似产品推荐

概览

The NXH003P120M3F2PTHG is a power module containing 4 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 4 mohm / 1200 V M3S SiC MOSFET Half−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to NXH004P120M3F2PTHG

CAD Model

CAD模型

物质成分

产品更改通知

Elite Power Simulator

PLECS Model Generator

产品列表

需要栅极驱动器？

如需购买产品或样品，请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

RDS(on) Typ (mΩ)

Application

Reference Price

NXH004P120M3F2PTHG

Contact Sales

Active

CAD Model

Pb

A

H

P

-

180BY

NA

0

BTRAY

20

F

Half-Bridge

1200

4

EV Charging, Energy Infrastructure

$174.5316

More Details

Show More

1-25 of 25

Products per page

Jump to :

1

Support on the go

Find and compare products, get support and connect with onsemi sales team.