Silicon Carbide (SiC) Modules | NXH004P120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

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The NXH003P120M3F2PTHG is a power module containing 4 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 4 mohm / 1200 V M3S SiC MOSFET Half−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

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Elite Power Simulator

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NXH004P120M3F2PTHG

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CAD Model

Pb

A

H

P

PIM36 56.70x42.50x12.00

180BY

NA

0

BTRAY

20

F

Half-Bridge

1200

4

EV Charging, Energy Infrastructure

$174.5316

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