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Silicon Carbide (SiC) Modules | NXH004P120M3F2PTHG
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The NXH003P120M3F2PTHG is a power module containing 4 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.
- DC-AC conversion
- DC-DC conversion
- AC-DC conversion
- UPS
- Energy Storage Systems
- Electric Vehicle Charging Stations
- Solar Inverters
- Excellent FOM [ = Rdson * Eoss ]
- 15V to 18V Gate Drive
- 4 mohm / 1200 V M3S SiC MOSFET Half−Bridge
- These Devices are Pb−Free, Halide Free and are RoHS Compliant
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NXH004P120M3F2PTHG
Active
Pb
A
H
P
PIM36 56.70x42.50x12.00
NA
0
BTRAY
20
F
Half-Bridge
1200
4
EV Charging, Energy Infrastructure
$174.5316
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