Silicon Carbide (SiC) Modules | NXH004P120M3F2PTNG

Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

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The NXH004P120M3F2PTNG is a half−bridge or 2 PACK EliteSiC Module with 2 4mohm 1200V SiC MOSFET switches and a thermistor with Si3N4 DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters
  • 15V to 18V Gate Drive
  • 4 mohm / 1200V M3S SiC MOSFET Half-Bridge
  • Pb-Free, Halide Free and are RoHS Compliant

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NXH004P120M3F2PTNG

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CAD Model

Pb

A

H

P

PIM36 56.70x42.50x12.00

180BY

NA

0

BTRAY

20

F

Half-Bridge

1200

4

EV Charging, Energy Infrastructure

$200.3335

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