Silicon Carbide (SiC) Modules | NXH007F120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package

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概览

The NXH007P120M3F2PTHG is a power module containing 7 mohm / 1200 V SiC MOSFET Full−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters
  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 7 mohm / 1200 V M3S SiC MOSFET Full−Bridge
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

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NXH007F120M3F2PTHG

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CAD Model

Pb

A

H

P

PIM34 56.70x42.50x12.00

180HU

NA

0

BTRAY

20

F

Bridge

1200

7

EV Charging, Energy Infrastructure

$156.1104

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