Silicon Carbide (SiC) Modules | NXH011T120M3F2PTHG

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

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The NXH011T120M3F2PTHG is a power module containing an 11 mohm / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • These Devices are Pb−Free, Halide Free and are RoHS Compliant
  • 11 mohm / 1200 V M3S SiC MOSFET TNPC
  • 15V to 18V Gate Drive

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NXH011T120M3F2PTHG

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Pb

A

H

P

PIM29, 56.70x42.50x12.00

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0

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20

F

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1200

11

EV Charging, Energy Infrastructure

$102.0285

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