Silicon Carbide (SiC) Modules | NXH020U90MNF2

SiC模块，维也纳模块900V，2 x 10mohm SiC MOSFET，1200V，2 x 100A，F2封装

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NXH020U90MNF2维也纳SiC模块，带有2个10mohm 900V SiC MOSFET开关和2个100A 1200V SiC二极管和一个热敏电阻，采用F2封装。SiC MOSFET开关采用M2技术，由15V-18V栅极驱动。

  • AC-DC转换

  • UPS
  • 储能系统
  • 电动汽车充电桩

  • 强固的M2平面SiC MOSFET技术
  • 15V至18V栅极驱动

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NXH020U90MNF2PTG

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Pb

A

H

P

PIM20 56.7x42.5 (PRESS FIT)

180BZ

NA

0

BTRAY

20

F

Vienna

900

10

EV Charging, Energy Infrastructure

$160.2857

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可靠性数据

Die Related Summary Data

Device: NXH020U90MNF2PTG

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

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SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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