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Silicon Carbide (SiC) Modules | NXH030P120M3F1PTG
概览
The NXH030P120M3F1PTG is a power module containing 30 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
- DC-AC conversion
- DC-DC conversion
- AC-DC conversion
- UPS
- Energy Storage Systems
- Electric Vehicle Charging Stations
- Solar Inverters
- Excellent FOM [ = Rdson * Eoss ]
- 15V to 18V Gate Drive
- 30 mohm / 1200 V M3S SiC MOSFET Half−Bridge
- These Devices are Pb−Free, Halide Free and are RoHS Compliant
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NXH030P120M3F1PTG
Active
Pb
A
H
P
PIM18 33.8x42.5 (PRESS FIT)
NA
0
BTRAY
28
Half-Bridge
1200
30
EV Charging, Energy Infrastructure
$54.1861
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