Schottky Diodes & Schottky Rectifiers | MBRF20200CT

Schottky Power Rectifier, Switch-mode, 20 A, 200 V

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The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

  • Highly Stable Oxide Passivated Junction
  • Very Low Forward Voltage Drop
  • Matched Dual Die Construction
  • High Junction Temperature Capability
  • High dv/dt Capability
  • Guardring for Stress Protection
  • Epoxy Meets UL94, VO at 1/8"
  • Electrically Isolated. No Isolation Hardware Required.
  • UL Recognized File #E69369

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.9 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
  • Marking: B20200

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MBRF20200CT

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MBRF20200CTG

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CAD Model

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Die Related Summary Data

Device: MBRF20200CTG

Equivalent to wafer fab process: RECT

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平均故障间隔时间/平均无故障时间（按小时计算）

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RECT

3

19108175705

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Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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