Silicon Carbide (SiC) Cascode JFETs

Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness.These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.