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Silicon Carbide (SiC) Cascode JFETs | UF4SC120023B7S
概览
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads
- EV Charging
- PV Inverters
- Power Factor Correction Units
- Motor Drives
- induction heating
- Electric Vehicle
- Solar Inverter
- AI/Datacenter Power Supply
- On-resistance RDS(on)
- Maximum operating temperature: 175 °C
- Excellent Reverse Recover
- Low Gate Charge
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UF4SC120023B7S
Active, New
Pb
A
H
P
D2PAK-7 / TO-263-7
1
255
REEL
800
1200
72
23
D2PAK-7L
37.8
85
175
N
$17.1062
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