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Silicon Carbide (SiC) Combo JFETs | UG4SC075009K4S
概览
The UG3SC120009K4S "Combo-JFET" integrates both a 1200V
SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L
package. This innovative approach allows users to create circuitry
that would enable a normally-off switch while leveraging the benefits
of a normally-on SiC JFET. These benefits include ultra-low on-
resistance (RDS(on)) to minimize conduction losses and the exceptional
robustness characteristic of a simplified JFET device structure,
making it capable of handling the high-energy switching required in
circuit protection applications. For switch-mode power conversion
application, this device provides separate access to the JFET and
MOSFET gates for improved speed control and ease of paralleling
multiple devices.
- Solid State / Semiconductor Circuit Breaker
- Solid state / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
- High power switch mode converters (>25kW)
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
- Single digit RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+FETs)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- short circuit rated
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