The UG3SC120009K4S "Combo-JFET" integrates both a 1200V
SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L
package. This innovative approach allows users to create circuitry
that would enable a normally-off switch while leveraging the benefits
of a normally-on SiC JFET. These benefits include ultra-low on-
resistance (RDS(on)) to minimize conduction losses and the exceptional
robustness characteristic of a simplified JFET device structure,
making it capable of handling the high-energy switching required in
circuit protection applications. For switch-mode power conversion
application, this device provides separate access to the JFET and
MOSFET gates for improved speed control and ease of paralleling
multiple devices.
如需购买产品或样品，请先登录您的安森美账号。
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
UG4SC075009K4S
Active, New
Pb
A
H
P
-
-
NA
0
REEL
1
F
750
344
8.4
TO-247-4L
75
230
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
如果你希望对这款安森美产品作进一步了解，欢迎点击下方提交表格联系我们的销售团队。
向销售发送邮件
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.
