Silicon Carbide (SiC) Diodes | UJ3D06506TS

Silicon Carbide (SiC) Diode - EliteSiC, TO-220-2L, 6A, 650V SiC Merged PiN-Schottky (MPS) Diode

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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Power converters
  • Switch mode power supplies
  • Motor drives
  • Power factor correction modules

  • Industrial Power Supply
  • EV Charger
  • Solar Inverter
  • Industrial Motor

  • Operating temperature: 175°C (max)
  • Easy paralleling
  • Extremely fast switching not dependent on temperature
  • No reverse or forward recovery
  • Enhanced surge current capability, MPS structure
  • Excellent thermal performance, Ag sintered
  • 100% UIS tested

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UJ3D06506TS

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Pb

A

H

P

TO-220-2

340AZ

NA

0

TUBE

1000

F

Q1

Single

650

6

1.7

45

40

$1.5066

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