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Silicon Carbide (SiC) JFETs | UF3N120007K4S
概览
The UF3N120007K4S is a 1200 V, 7.1mohm high-performance Gen
3 normally-on SiC JFET transistor. This device exhibits ultra-low on
resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to
address the challenging thermal constraints of solid-state circuit
breakers and relay applications. Additionally, the JFET is a robust
device technology capable of the high-energy switching required in
circuit protection applications.
- Solid State / Semiconductor Circuit Breaker
- Solid state / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
- Single digit RDS(on)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- RoHS compliant
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