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Silicon Carbide (SiC) MOSFETs Bare Die | NCS025M3E120NF06X
EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation
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概览
onsemi is proud to offer the 3rd generation of EliteSiC Silicon Carbide (SiC) MOSFETs in bare die format - optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.
Based on the latest generation of SiC MOSFET technology from onsemi, the M3e product family offers the lowest on-resistance in its class, with optimized top and back metal options suitable for multiple packaging technologies including soldering, sintering, wire-bond, die top copper, and ribbon bonds. By utilizing onsemi's M3e product, packaging flexibility helps to reduce the system size, weight, application complexity, while increase power density and efficiency in traction inverter applications of electric vehicles.
Moving from silicon based solutions to silicon carbide based solutions helps to improve efficiency and range by up to 5% in battery electric vehicle traction inverters.
- Main Traction Inverter Applications
- High Voltage DC/DC Converters
- Off-Board Chargers
- 1200V SiC MOSFET Bare Dice
- 3rd Generation SiC MOSFET
- High Blocking Voltage 1200V
- Low Conduction Losses Over Temperature
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NCS025M3E120NF068-09
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Pb
A
H
P
-
-
NA
0
MTFRM
1
F
EliteSiC M3e
1200
150
11
204
221
175
Y
Price N/A
More Details
NCS025M3E120NT066-09
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Pb
A
H
P
-
-
NA
0
REEL
3000
F
EliteSiC M3e
1200
150
11
204
221
175
Y
Price N/A
More Details
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