碳化硅(SiC)MOSFET – EliteSiC系列,14 mohm,1200V,M3P,D2PAK-7L封装

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概览

全新系列1200V M3P平面型SiC MOSFET,优化用于电源应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。这一系列在用18V栅极驱动时能提供最佳性能,但同样适用15V栅极驱动。

  • AC-DC转换
  • DC-AC转换
  • DC-DC转换

  • UPS
  • 电动车充电桩
  • 光伏逆变器
  • 储能系统

  • 用于低共源电感的D2PAK-7L封装
  • 15V至18V栅极驱动
  • 全新M3P技术:14mohm RDS(ON),低EON和低EOFF损耗
  • 100%通过雪崩测试

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTBG014N120M3P

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

REEL

800

M3P

1200

74

14

329

262

175

$19.8363

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