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全新系列1200V M3P平面型SiC MOSFET,优化用于电源应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。这一系列在用18V栅极驱动时能提供最佳性能,但同样适用15V栅极驱动。
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