Silicon Carbide (SiC) MOSFETs | NTBG160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC/DC Converter
  • Boost Inverter
  • UPS

  • Solar
  • Charging Station
  • Motor Drive
  • AUX Power

  • Ultra Low Gate Charge
  • High Speed Switching and Low Capacitance
  • 1200V rated
  • 100% Avalanche Tested
  • Devices are RoHS Compliant

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NTBG160N120SC1

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

245

REEL

800

Y

M1

1200

19.5

160

33.8

50.7

175

$3.8765

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可靠性数据

Die Related Summary Data

Device: NTBG160N120SC1

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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