Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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NTBG160N120SC1
Active
Pb
A
H
P
D2PAK7 (TO-263-7L HV)
1
245
REEL
800
Y
M1
1200
19.5
160
33.8
50.7
175
$3.8765
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