Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die

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Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • Boost Inverter
  • PV Charging
  • Motor Drives
  • UPS
  • Charging Stations
  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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NTC040N120SC1

Active

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

Y

M1

1200

40

40

90.5

140

175

$11.1095

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