Silicon Carbide (SiC) MOSFETs | NTC040N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die

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Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • Boost Inverter
  • PV Charging
  • Motor Drives

  • UPS
  • Charging Stations

  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested

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ID(max) (A)

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NTC040N120SC1

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Pb

A

H

P

-

-

NA

0

MTFRM

1

Y

M1

1200

40

40

90.5

140

175

$11.1095

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可靠性数据

Die Related Summary Data

Device: NTC040N120SC1

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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