Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.
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NTC040N120SC1
Active
Pb
A
H
P
-
-
NA
0
MTFRM
1
Y
M1
1200
40
40
90.5
140
175
$11.1095
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