Silicon Carbide (SiC) MOSFETs | NTH4L040N120M3S

碳化硅（SiC）MOSFET – EliteSiC系列，40 mohm，1200V，M3S，TO-247-4L封装

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概览

全新系列1200V M3S平面型EliteSiC MOSFET，优化用于快速开关应用。平面工艺在负栅极驱动电压和栅极上的关断尖峰下都能够可靠运行。EliteSiC碳化硅系列在用18V栅极驱动时能提供最佳性能，但同样适用15V栅极驱动。

  • 工业
  • ESS / UPS
  • 太阳能
  • 电动车充电桩
  • TO-247-4L开尔文源极封装
  • 出色的 FOM值（品质因数） [ = Rdson * Eoss ]
  • 超低栅极电荷 (QG(tot) = 75 nC)
  • 高速开关，低电容（Coss = 80 pF）
  • 15V至18V栅极驱动
  • 全新M3S技术：40 mohm RDS(ON)，低EON和低EOFF损耗
  • 100%通过雪崩测试
  • 无卤素，符合RoHS标准

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NTH4L040N120M3S

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Pb

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TO-247-4

340CJ

NA

0

TUBE

450

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M3S

1200

54

40

75

80

175

$8.4157

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