Silicon Carbide (SiC) MOSFETs | NTHL020N120SC1

碳化硅（SiC）MOSFET – EliteSiC系列，20 mohm，1200V，M1，TO-247-3L封装

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概览

碳化硅MOSFET 采用全新工艺技术，相较于硅基款，能够带来更加优越的开关性能和更高的可靠度。此外，低导通电阻和紧凑的芯片尺寸确保了低电容和栅极电荷，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸。

  • PFC
  • 升压逆变器
  • 光伏充电

  • 光伏逆变器
  • 网络电源
  • 服务器电源
  • 充电站

  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
  • 高速开关和低电容
  • 1200V
  • 100% 通过 UIL 测试

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Blocking Voltage BVDSS (V)

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NTHL020N120SC1

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Pb

A

H

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TO-247-3LD

340CX

NA

0

TUBE

450

Y

M1

1200

103

20

203

260

175

$21.93

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可靠性数据

Die Related Summary Data

Device: NTHL020N120SC1

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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