Silicon Carbide (SiC) MOSFETs | NTHL160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging

  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Motor Control

  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A
  • 1200V
  • 100% UIL Tested

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NTHL160N120SC1

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Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

M1

1200

26

160

24

40

175

$3.9743

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可靠性数据

Die Related Summary Data

Device: NTHL160N120SC1

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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