Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging

  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Motor Control

  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A
  • 1200V
  • 100% UIL Tested

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NTHL160N120SC1

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CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

26

160

24

40

175

$3.9743

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