Silicon Carbide (SiC) MOSFETs | NVBG020N120SC1

碳化硅（SiC）MOSFET，N沟道– EliteSiC系列，20 mohm，1200V，M1，D2PAK−7L封装

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概览

EliteSiC系列碳化硅MOSFET 采用全新工艺技术，相较于硅基款，能够带来更加优越的开关性能和更高的可靠度。此外，低导通电阻和紧凑的芯片尺寸确保了低电容和栅极电荷，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸。

  • 高功率DC-DC
  • 逆变器
  • 用于EV/PHEVDC/DC转换器
  • 汽车逆变器
  • 1200V额定电压
  • AEC−Q101车规级认证
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
  • 高速开关和低电容
  • 100% 通过 UIL 测试
  • 符合RoHS标准

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NVBG020N120SC1

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D2PAK7 (TO-263-7L HV)

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245

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800

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M1

1200

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$31.8634

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