Silicon Carbide (SiC) MOSFETs | NVBG020N120SC1

碳化硅（SiC）MOSFET，N沟道– EliteSiC系列，20 mohm，1200V，M1，D2PAK−7L封装

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概览

EliteSiC系列碳化硅MOSFET 采用全新工艺技术，相较于硅基款，能够带来更加优越的开关性能和更高的可靠度。此外，低导通电阻和紧凑的芯片尺寸确保了低电容和栅极电荷，为系统带来更高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及更小的系统尺寸。

  • 高功率DC-DC
  • 逆变器

  • 用于EV/PHEVDC/DC转换器
  • 汽车逆变器

  • 1200V额定电压
  • AEC−Q101车规级认证
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
  • 高速开关和低电容
  • 100% 通过 UIL 测试
  • 符合RoHS标准

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NVBG020N120SC1

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Pb

A

H

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D2PAK7 (TO-263-7L HV)

418BJ

1

245

REEL

800

Y

M1

1200

98

20

220

258

175

$31.8634

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可靠性数据

Die Related Summary Data

Device: NVBG020N120SC1

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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