Silicon Carbide (SiC) MOSFETs | NVBG030N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L

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The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • DC/DC converters for EV/HEV
  • On Board Charger (OBC)

  • Automotive EV/HEV

  • D2PAK-7L package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 30mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested
  • Devices are Pb−Free and are RoHS Compliant
  • Qualified for Automotive According to AEC−Q101

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NVBG030N120M3S

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Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

260

REEL

800

F

M3S

1200

77

29

107

106

175

$16.1705

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