Silicon Carbide (SiC) MOSFETs | NVBG070N120M3S

Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L

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概览

1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • Typical RDS(on) = 64.3mΩ at Vgs =18V, Id = 15A
  • Qualified for Automotive According to AEC−Q101
  • New M3S technology: 64.3mohm RDS(ON) with low EON and EOFF losses
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant

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NVBG070N120M3S

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D2PAK7 (TO-263-7L HV)

1

260

REEL

800

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M3S

1200

36

65

57

57

175

$8.6083

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