Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L

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EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Power
  • On Board Charger

  • EV/HEV

  • 1200V
  • High Junction Temperature
  • High UIS, Surge Current, and Avalanche
  • Qualified for Automotive

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NVH4L080N120SC1

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CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

M1

1200

29

80

56

80

175

$8.4714

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