Silicon Carbide (SiC) MOSFETs | NVH4L080N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L

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EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Power
  • On Board Charger

  • EV/HEV

  • 1200V
  • High Junction Temperature
  • High UIS, Surge Current, and Avalanche
  • Qualified for Automotive

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

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NVH4L080N120SC1

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Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

M1

1200

29

80

56

80

175

$8.4714

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可靠性数据

Die Related Summary Data

Device: NVH4L080N120SC1

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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