Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 70 mohm, 650V, M2, TO247−4L

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EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive DC/DC and PFC

  • Automotive On Board Charger

  • Qualified for Automotive According to AEC−Q101
  • Ultra Low Gate Charge (Typ. Qg = 50 nC)
  • High Speed Switching with Low Capacitance (Coss = 89 pF)
  • Zero reverse recovery current of body diode
  • Kelvin Source configuration
  • Typ. RDS(on) = 70 mΩ at Vgs = 18V
  • 100% UIL Tested
  • RoHS Compliant

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NVH4L095N065SC1

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Pb

A

H

P

TO-247-4

NA

0

TUBE

450

M2

650

31

95

50

89

175

$6.7434

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