Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L

Active

概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC DC Inverter

  • Automotive EV/HEV

  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
  • Qualified for Automotive According to AEC−Q101
  • High Speed Switching and Low Capacitance
  • Devices are Pb−Free and are RoHS Compliant
  • 1200V rated

Product Resources

Product services, tools and other useful resources related to NVHL020N120SC1

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NVHL020N120SC1

Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

103

20

203

260

175

$31.948

More Details

Show More

1-25 of 25

Products per page

Jump to :

Product Support

如果你希望对这款安森美产品作进一步了解,欢迎点击下方提交表格联系我们的销售团队。