Silicon Carbide (SiC) MOSFETs | NVHL020N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L

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概览

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC DC Inverter
  • Automotive EV/HEV
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
  • Qualified for Automotive According to AEC−Q101
  • High Speed Switching and Low Capacitance
  • Devices are Pb−Free and are RoHS Compliant
  • 1200V rated

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NVHL020N120SC1

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TO-247-3LD

340CX

NA

0

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450

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M1

1200

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20

203

260

175

$31.948

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