Silicon Carbide (SiC) MOSFETs | NVHL080N120SC1

碳化硅 MOSFET，N 沟道，1200 V，80 mΩ，TO247−3L

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碳化硅 (SiC) MOSFET 使用全新技术，能够提供卓越的开关性能，且比硅具有更高的可靠性。 另外，低导通电阻和紧凑的芯片尺寸可确保低电容和低门极电荷。 因此，系统优点有：最高效率、更快的运行频率、提高了功率密度、降低了 EMI，以及减小了系统尺寸。

  • PFC
  • OBC

  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive

  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Qualified for Automotive According to AEC−Q101
  • Devices are Pb−Free and are RoHS Compliant

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NVHL080N120SC1

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

M1

1200

44

80

56

80

175

$8.0986

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可靠性数据

Die Related Summary Data

Device: NVHL080N120SC1

Equivalent to wafer fab process: SIC

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平均故障间隔时间/平均无故障时间（按小时计算）

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SIC

0

3855921070

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Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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