Gate Drivers | FAD7191

600V，4.5A，高电流，高压和低压侧汽车门极驱动集成电路

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FAD7191 是一款单片高压和低压侧门极驱动集成电路，可以驱动最高在 +600V 下运行的 MOSFET 和 IGBT。它具有缓冲输出级，所有 NMOS 晶体管都针对高脉冲驱动能力和最小交叉导通而设计。 安森美半导体的高电压工艺和共模干扰抑制技术提供了高压侧驱动器在高 dv/dt 干扰情况下的稳定运行。先进的电平转换电路针对 VBS=15 V 提供了最高 VS=-9.8 V（典型值）的高压侧门极驱动器运行。当 VDD 和 VBS 低于指定的阈值电压时，UVLO 电路将防止故障运行。高电流和低输出电压降低特性使得此器件适用于控制直喷驱动器，以及很多汽车 DC-DC 转换器和电机控制应用。FAD7191 采用 14-SOP 封装,具有单独的信号和电源接地可用于在高功率应用中实现更高抗扰性，高电压应用中必要的充分间距和漏电距离，以及用于关断冗余目的的启用引脚。

  • MOSFET and IGBT driver applications
  • Motor Control (A/C compressor, pumps, e-turbo)
  • DC-DC converters
  • Automotive applications

  • Electric and Hybrid Electric Vehicles (EV-HEV)
  • 48V Mild Hybrid Vehicles

  • Floating Channel for Bootstrap Operation to +600V
  • 4.5A Sourcing and 4.5A Sinking Current Driving Capability
  • Common-Mode dV/dt Noise Cancelling Circuit
  • Built-in Under-Voltage Lockout for Both Channels
  • Matched Propagation Delay for Both Channels
  • 3.3V and 5V Input Logic Compatible
  • Output In-phase with Input
  • Qualified to AEC Q100
  • Separate signal and power grounds
  • 14-SOP package with creepage and clearance for High Voltage applications
  • Enable pin for shutdown redundancy purpose

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FAD7191M1X

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CAD Model

Pb

A

H

P

SOIC-14

751EF

2

260

REEL

2500

Y

MOSFET / IGBT

1

High-Low

Junction Isolation

625

25

25

25

-

-

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-

-

$1.0288

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Die Related Summary Data

Device: FAD7191M1X

Equivalent to wafer fab process: ANALOG

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平均故障间隔时间/平均无故障时间（按小时计算）

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0

452850337

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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