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NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel SiC/MOSFET/IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience. NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCD57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
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