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Gate Drivers | NCD57090
概览
NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel SiC/MOSFET/IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience. NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.
应用
- UPS
- Motor Control
- Industrial Power Supplies
- HVAC
- Solar Inverters
终端产品
- Industrial Motor Drives
- Data Center & Server Power Supplies
- Energy Storage and Charging Systems
特性
- High Peak Output Current (+6.5 A/-6.5 A)
- Short Propagation Delays with Accurate Matching
- High Transient & Electromagnetic Immunity
- 5 KVrms On-Chip Galvanic Isolation
- Wide Bias Voltage Ranges and Input Voltage Range
- Active Miller Clamp or Negative Gate Voltage or Split Outputs
产品列表
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产品:
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可订购器件:
18
产品
NCD57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCD57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090DDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090EDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57090FDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.265
More Details
NCV57091ADWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091BDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
NCV57091CDWR2G
Active
Pb
A
H
P
SOIC8 WB
1
260
REEL
1000
Y
SiC MOSFET
1
Single
Galvanic Isolation
20
20
13
13
6.5
6.5
60
60
15
$1.495
More Details
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