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NCD57100 / NCD57101 are a high−current single channel SiC/IGBT/MOSFET drivers with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UVLOs, DESAT protection and DESAT diagnostic function, soft turn−off at DESAT, Disable output function and separate high and low (OUTH and OUTL) driver outputs (NCx57100) for system design convenience. NCx5710y accommodates both 5V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCx5710y provides > 5kVrms (UL1577 rating) galvanic isolation and > 1424 VPK (working voltage) capabilities. NCx5710y is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.
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CAD Models
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
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Container Qty.
ON Target
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Reference Price
NCD57100DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
F
SiC MOSFET
1
Single
Galvanic Isolation
5
30
10
15
7
7
60
66
15
$1.4666
More Details
NCD57101DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
F
SiC MOSFET
1
Single
Galvanic Isolation
5
30
10
15
7
7
60
66
15
$1.4666
More Details
NCV57100DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
F
SiC MOSFET
1
Single
Galvanic Isolation
5
30
10
15
7
7
60
66
15
$1.4666
More Details
NCV57101DWR2G
Active
Pb
A
H
P
SOIC-16W
1
260
REEL
1000
F
SiC MOSFET
1
Single
Galvanic Isolation
5
30
10
15
7
7
60
66
15
$1.4666
More Details
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