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Gate Drivers | NCD57540
概览
NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 for >8mm Creepage and Clearance
- Automotive Applications
- Industrial Applications
- EV Chargers
- Uninterruptible Power Supplies (UPS)
- Industrial Power Supplies
- Solar Inverters
- Traction Inverters
- PLC Motor Control
- Solar Panels
- High Peak Output Current (±6.5 A, ±3.5 A)
- Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver
- Tight UVLO Thresholds on all Power Supplies
- 2.5 or 5 kVrms Galvanic Isolation from Input to each Output and 1.5 kVrms Differential Voltage between Output Channels
- Short Propagation Delays with Accurate Matching
- 3.3 V, 5 V, and 15 V Logic Input
- Programmable Overlap or Dead Time controlProgrammable Overlap or Dead Time control
- Disable / Enable Pin to Turn Off Outputs for Power Sequencing
- IGBT Gate Clamping during Short Circuit
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NCD57530DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCD57540DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCV57530DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
NCV57540DWKR2G
Active
Pb
A
H
P
SOIC−16 WB LESS PINS 12 & 13
1
260
REEL
1000
F
SiC MOSFET
1
Dual
Galvanic Isolation
22
36
12
10
6.5
6.5
60
60
15
$2.5035
More Details
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