Gate Drivers | NCV51511

100V 高频率，高压侧和低压侧门极驱动器

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NCV51511 是一款适用于高电压和高速的高压侧和低压侧门极驱动集成电路，适用于驱动在高达 80 V 的电压下运行的 MOSFET。NCV51511 集成了一个驱动器集成电路和一个自举二极管。该驱动器集成电路具有较低的延迟时间和匹配的 PWM 输入传播延迟，进一步增强了该零部件的性能。 该高速双门极驱动器适用于在半桥或同步降压配置中驱动 N 沟道 MOSFET 的高压侧和低压侧。浮动高压侧驱动器能够以高达 80 V 的电源电压运行。在双门极驱动器中，高压侧和低压侧均具有独立的输入，实现了应用中输入控制信号的最大灵活性。PWM 输入信号（高电平）可以为 3.3 V、5 V 或最高 VDD 逻辑输入，覆盖所有可能应用。

  • Half-Bridge and Full-Bridge Converters
  • Synchronous-Buck Converters
  • Two-Switch Forward Converters

  • 48V Automotive Converters

  • Integrated Bootstrap Diode for High Side Gate Drive
  • Bootstrap Supply Voltage Range up to 100V
  • 3 A Source, 6 A Sink Output Current Capability
  • Drives 1nF Load with Typical Rise/Fall Times of 6 ns/4 ns
  • 2 ns Delay Matching (Typical)
  • AEC Qual up to 150°C Tj
  • HS robustness against negative transients

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Number of Outputs

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Reference Price

NCV51511PDR2G

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CAD Model

Pb

A

H

P

SOIC-8 EP

751AC

2

260

REEL

2500

Y

MOSFET

2

High-Low

Junction Isolation

100

18

6

4

3

6

30

28

10

$1.3483

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可靠性数据

Die Related Summary Data

Device: NCV51511PDR2G

Equivalent to wafer fab process: CMOS SUB

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

CMOS SUB

2

920154574

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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