Gate Drivers | NCV57001

SiC/MOSFET/IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation

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NCV57001 is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. NCV57001 accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57001 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCV57001 is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

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  • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
  • Short Propagation Delays with Accurate Matching
  • DESAT with Soft Turn Off
  • Active Miller Clamp and Negative Gate Voltage
  • High Transient & Electromagnetic Immunity
  • 5 kV Galvanic Isolation

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NCV57001DWR2G

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Pb

A

H

P

SOIC-16W

751G-03

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

5.5

24

10

15

7.8

7.1

60

60

-

$2.2885

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Die Related Summary Data

Device: NCV57001DWR2G

Equivalent to wafer fab process: ONC25

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ONC25

1

2712519294

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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