Integrated Driver & MOSFET | FDMF6820C

超小型，高性能，高频率 DrMOS 模块

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概览

该 XS™ DrMOS 系列是安森美半导体下一代、全优化、超紧凑型集成式 MOSFET 和驱动器功率级方案，用于高电流、高频率、同步降压、DC-DC 应用。FDMF6820C 在一个热管理增强的、超紧凑型 6x6mm 封装内集成了一个驱动集成电路和一个自举肖特基二极管。通过集成方式，该完整开关功率级针对驱动器和 MOSFET 动态性能、系统电感和功率 MOSFET RDS(ON) 进行了优化。该 XS™ DrMOS 系列使用安森美半导体的高性能 PowerTrench® MOSFET 技术，大幅降低了开关振铃，不再需要大多数降压转换器应用中的吸收电路。减少了死区时间和传播延迟的驱动集成电路进一步增强了性能。温度警告功能会针对潜在的超温情况发出警告。FDMF6820A 结合了跳过模式 (SMOD#)，可提高轻负载下的能效。FDMF6820C 也提供 3 态 3.3V PWM 输入，从而与多种 PWM 控制器兼容。

  • Core Power for Servers, Desktop Computers, Notebooks, Game Consoles, Networking, Storage, Telecom
  • High-Current dc-dc Converters
  • Multi-phase dc-dc Converters

  • 超过93%的峰值效率
  • 高电流处理能力： 45A
  • 高性能PQFN铜片封装
  • 3态3.3V PWM输入驱动器
  • 跳跃模式SMOD#（低端栅极关闭）输入
  • 为过温情况提供热警告标志
  • 驱动器输出禁用功能（DISB#引脚）
  • 分别为SMOD#和DISB#输入提供内部上拉电阻和下拉电阻
  • 飞兆PowerTrench®技术MOSFET，可提供干净的电压波形并降低振铃噪声
  • 低端MOSFET中的飞兆SyncFET™（集成肖特基二极管）技术
  • 集成自举肖特基二极管
  • 实现直通保护的自适应栅极驱动时序
  • 欠压闭锁(UVLO)
  • 为实现开关频率达到1MHz而优化
  • 薄型SMD封装
  • 基于Intel® 4.0 DrMOS标准
  • 飞兆绿色封装并符合RoHS标准

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FDMF6820C

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Obsolete

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Pb

A

H

P

PQFN-40

483AN

1

260

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3000

N

5

12

3.3 V Tri-State

50

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可靠性数据

Die Related Summary Data

Device: FDMF6820C

Equivalent to wafer fab process: GK,RN,U4

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

GK,RN,U4

0

108100566

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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