方案
By Technology
公司介绍
NIS542x是一款具有性价比的可复位电子熔丝,可大大提升硬盘或其他电路的可靠性,预防灾难性故障和停机故障的发生。它能够帮助负载设备对过高的输入电压进行缓冲,因为过高的输入电压可能会损坏敏感电路。它还包括一个过压钳位电路,可在瞬态期间限制输出电压,但不会关闭设备,从而允许负载电路继续运行。
如需购买产品或样品,请先登录您的安森美账号。
搜寻
Close Search
产品:
8
分享
排序方式
产品系列:
┗
可订购器件:
8
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Type
VI Max (V)
rDS(on) Max (mΩ)
TSD Typ (°C)
Thyst Typ (°C)
Reference Price
NIS5420MT1TXG
More Details
NIS5420MT2TXG
More Details
NIS5420MT3TXG
More Details
NIS5420MT4TXG
More Details
NIS5420MT5TXG
More Details
NIS5420MT6TXG
More Details
NIS5420MT7TXG
More Details
NIS5420MT8TXG
More Details
Show More
1-25 of 25
Products per page
Jump to :
如果你希望对这款安森美产品作进一步了解,欢迎点击下方提交表格联系我们的销售团队。
向销售发送邮件
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: NIS5420MT1TXG
Equivalent to wafer fab process: ONC18
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
ONC18
2
6465777234
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com
You might also try the following:
Thank you for submitting the contact sales form. Your request is on its way to our sales support team!
We thank you for your interest in onsemi and are working on your request. Our sales support team will respond to your request within two business days.