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安森美半导体的 C 系列硅光电倍增 (SiPM) 传感器具有行业领先的 30 kHz/mm2 低暗计数率,以及卓越的 ±250 mV 击穿电压均匀性。高光子探测效率 (PDE) 使用大容量 CMOS 工艺延伸到了光谱蓝色部分。 C 系列传感器提供 1 mm、3 mm 和 6 mm 尺寸以及多种微单元尺寸。此类器件封装在可平铺成型引线框架 (MLP) 封装内,可兼容行业标准、无引线、回流焊接工艺。C 系列还具有独特的快速输出,适用于快速计时应用。
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Active Area Dimensions
Microcell Size (µm)
Optimized Wavelength (nm)
PDE @ Max Overvoltage (%)
DCR @ Typical Overvoltage (KHz/mm2)
Reference Price
MICROFC-10010-SMT-TR
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MICROFC-10010-SMT-TR1
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MICROFC-10020-SMT-TR
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MICROFC-10020-SMT-TR1
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MICROFC-10035-SMT-TR
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MICROFC-10035-SMT-TR1
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MICROFC-30020-SMT-TR
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MICROFC-30020-SMT-TR1
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MICROFC-30035-SMT-TR
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MICROFC-30035-SMT-TR1
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MICROFC-30050-SMT-TR
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MICROFC-30050-SMT-TR1
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MICROFC-60035-SMT-TR
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MICROFC-60035-SMT-TR1
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可靠性数据
Die Related Summary Data
Device: MICROFC-30035-SMT-TR
Equivalent to wafer fab process: CMOS SUB
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS SUB
2
920154574
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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