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LVT16646和LVTH16646包含16个同相双向寄存总线收发器,直接从输入总线或内部存储寄存器提供多路复用数据传输。 每个半字节均有独立的控制输入,可以短接在一起进行完整的16位运行。 DIR输入确定数据在器件中流动的方向。 CPAB和CPBA输入在低电平至高电平转换期间将数据加载到寄存器中(见“功能描述”)。 LVTH16646数据输入包含总线保持功能,无需外部上拉电阻即可保持未用的输入。 这些收发器设计用于低电压(3.3V) VCC应用,但也可向5V环境提供TTL接口。 LVT16646和LVTH16646采用先进的BiCMOS技术制造,可实现类似于5V ABT的高速运行,同时又能维持较低的CMOS功耗。
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74LVTH16646MTDX
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可靠性数据
Die Related Summary Data
Device: 74LVTH16646MTDX
Equivalent to wafer fab process: BB
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BB
0
105155986
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
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