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ICSCRM 2023
Event Details
Together with our end-to-end SiC manufacturing capabilities, onsemi EliteSiC products offer superior performance and exacting quality standards of products.
Come visit us in the Amalfi boardroom and learn more from our experts or book your private meeting.
About ICSCRM
From 2023, ICSCRM becomes an annual scientific event that explores, presents, and discusses the newest achievements in the field of wide-bandgap semiconductors focusing on silicon carbide (SiC) and other wide bandgap semiconductors. The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic, and public sectors. More than 800 delegates are expected.
Presentations by onsemi at ICSCRM 2023
Presenter
Title
Day and Time
Remark
Location
Session
Kwangwon Lee
Design optimization and reliability evaluation in 1.2 kV SiC trench MOSFET with deep P structure
September 19th
4:30PM - 6:30PM
Poster
17C
More Details
Thanh-Toan Pham
1.2 kV SiC MOSFET with Low Specific ON-Resistance And High immunity to Parasitic Turn-On
September 19th
2:30PM - 2:50PM
More Details
Marina Avramenko
Threshold voltage variation of SiC trench MOSFETs during TDDB stress
September 18th
4:00PM - 6:00PM
Poster
More Details
Youngbin Im
SiC MOSFET gate oxide quality improvement method in furnace thermal oxidation with lower pressure control
September 18th
4:00 PM - 6:00 PM
Poster
More Details
ChungJung Kim
Carbon control method in SIC MOSFET with Chlorine and Vth stability
September 20th
2:30PM - 4:30PM
Poster
More Details
Kyeongseok Park
Next step in SiC technology
September 22nd
2:00PM - 2:40PM
Plenary
More Details
Sara Kochoska
Body diode reliability of 4H-SiC MOSFETs as a function of epitaxial process parameters
September 18th
4:00PM - 6:00PM
Poster
More Details
Jimin Lee
Negative gate voltage Idss behavior of ion implantation effect on epi SF defects with high voltage SIC MOSFET
September 18th
4:00PM - 6:00PM
Poster
More Details
Jaume Roig Guitart
On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
September 21st
11:20AM - 11:40AM
More Details
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