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Watch NowThe surging demand for MOSFETs is fueled by the imperative to minimize losses, enhance power density, achieve a compact footprint, and prioritize reliability across diverse applications. You can achieve your design goals with onsemi’s superior MOSFET technology, delivering exceptional quality, robustness, and scalability to meet your mission-critical needs.
Our concurrent development of dies and packages yields optimized solutions for our customers. We provide cutting-edge packaging materials and superior thermal performance.
We leverage our deep expertise in Automotive and Industrial applications and provide comprehensive design support tools to facilitate your design needs.
Our physically scalable SPICE models and system-level PLECS model simulation tools deliver accurate simulation results.
PowerTrench T10 MOSFETs meet the growing market demand for reduced losses, increased power density, and a compact form factor with high reliability.
Shielded Gate Power Trench MOSFET technology used in T10 MOSFETs significantly improves efficiency, reduces output capacitance, and enhances figures of merit through lower RDS(on) and gate charge (Qg). The improved Figure of Merit (FOM) (RDS(on) x Qoss / Qg / Qgd) boosts overall performance and efficiency. The industry-leading soft recovery body diode (Qrr, Trr) minimizes ringing, overshoot, and noise. T10 technology also reduces wafer thickness, cutting the substrate contribution to RDS(on) from approximately 50% to 22% in 40V MOSFETs.
The Top Cool package gives the ability to shorten the heat path from the die to the heatsinking method by avoiding cooling through the PCB.
Read MoreRead case study and learn how onsemi's expertise solved critical challenges in 12V electric power steering system (EPS).
Read MoreOur gate driver offers enhanced performance, efficiency, and reliability for specific applications, providing precise control, minimize switching losses, and integrate robust protection features for longevity.
Read MoreGet everything you need about MOSFETs in one place.
40-80V MOSFETs in 3 x 3 mm high density u8-FL package.
40-80V MOSFETs in 5 x 6 mm advanced SO-8FL package.
80V MOSFETs in 10 x 12 mm high density TOLL package.
30-60V MOSFETs in 2 x 2 mm high density WDFNW6 package.
40-60V MOSFETs in 5 x 7 mm advanced TCPAK package (Top Cool technology).
40-150V MOSFETs in 8 x 8 mm high density DFNW8 package.
25-40V MOSFETs in 3 x 3 mm high density WDFN9 package.
40V MOSFETs in 3 x 3 mm high density WDFN9 package.
40-80V MOSFETs in 3 x 3 mm high density u8FL package.
40-80V MOSFETs in 5 x 6 mm high density DFN8 package.
25-80V MOSFETs in 5 x 6 mm high density SO-8FL package.
80V MOSFETs in 5 x 6 mm high density TOLL package.
Application Note
Shielded Gate POWERTRENCH® MOSFET Datasheet Explanation
Application Note
Top Cool Package for Power Discrete MOSFETs
Application Note
MOSFET Selection for Reverse Polarity Protection
Application Note
Understanding Power MOSFET Avalanche Operation and Associated UIS (UIL) Data Sheet
Application Note
MOSFET Basics
Application Note
Board Level Application Notes for DFN and QFN Packages
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