PowerUP Conference & Expo

What to Expect?

​The PowerUP and Fortronic Conference & Exhibition is the result of a collaboration between influential entities in the engineering and technology media landscape. Revolutionizing Power Electronics - Internationally renowned and experts in power electronics will explore how power systems are undergoing a significant transformation as the world transitions to sustainable energy. Explore the pivotal intersection of technology and environmental stewardship, unveiling strategies, breakthroughs, and challenges as we steer toward a greener future.

Meet Our Speakers

September 18 | 14:40 - 15:10

Vertical Integration in Energy: Adapting to Dynamic Market Demands with Comprehensive Solutions

This session explores the transformative impacts of Silicon Carbide (SiC) and Silicon IGBT technologies on energy infrastructure and electric vehicles. Discover comprehensive system solutions that optimize efficiency and cost-effectiveness throughout the energy value chain, focusing on solar solutions, energy storage, EV charging, and vehicle electrification. The concept of vertical integration serves as a springboard rather than a finish line.

As markets continue to evolve rapidly, the ability to offer comprehensive solutions becomes essential in meeting the dynamic and evolving demands of the market. Learn how these system-level innovations address dynamic market demands in the automotive and industrial sectors, contributing to a more efficient and resilient future.

Speaker: Simon Keeton - Group President, Power Solutions Group

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September 19 | 11:30 - 11:55

SiC MOSFETs: Meeting the Power Conversion Industry’s Exact Needs

SiC MOSFETs are now well established as delivering the performance needed to enable the emerging megatrend toward increased electrification and a sustainable energy infrastructure. The path forward now entails establishing more field-proven reliability statistics and reducing the price premium over incumbent Si products. In any well-designed MOSFET, the gate oxide is typically the weakest part of the structure, but even more so in the case of SiC, given its non-ideal MOS interface.

With more than 30 years of intense research scrutiny and more than 10 years in the field, the thermally grown gate oxide for planar MOSFETs has established long intrinsic lifetimes with excellent stability and low field failure rates. With the impending transition to trench MOSFETs, the industry must rebuild the gate oxide foundation before the unit cell density benefits of the trench structure can be realized. As device level innovations continue to drive down SiC costs, a major advancement from the materials side will be the advent of 200mm SiC wafers. The ability to print nearly 2x the number of die provides the opportunity to reduce SiC costs and increase manufacturing capacity to meet the rising demand for SiC-powered applications such as the EV powertrain, DC fast chargers, renewable energy systems, energy storage systems, and power supplies.

Speaker: Mrinal K. Das - Senior Director of Technical Marketing – Advanced Power Division