碳化硅 (SiC)

我们的碳化硅二极管产品采用全新技术，提供比硅材质更胜一筹的开关性能和可靠性。

硅二极管是众多机械设备广泛使用的一种元件，但对于追求更高效率的应用需求，现在有了一种新的选择。碳化硅二极管是一种开关性能更高的二极管。它们具有更高的功率密度和更高的整体效率。能量损耗的减少也有助于降低系统成本。

与硅二极管相比，碳化硅二极管效率更高，抗高温性能更优，能够在更高频率和更高电压的条件下工作。由于碳化硅二极管的恢复时间比硅二极管更快，因此非常适合需要从阻断快速过渡到导通状态的电流。SiC二极管的发热情况也不像硅二极管那样高，因此可用于温度更高的应用中，且效率更高。

我们的SiC MOSFET产品高速且坚固，并具备效率高、尺寸小、成本低的系统优势。

MOSFET是指具有绝缘栅极的金属氧化物半导体场效应晶体管（MOS管）。这些场效应晶体管通常由可控氧化硅制成，而SiC MOSFET是由碳化硅而不是硅制成的。

与硅MOSFET相比，选择SiC MOSFET有许多优势，例如开关频率更高。在使用 SiC MOSFET 模块时，也无需担心高温开发的问题，因为这些器件即使在高温条件下也能高效工作。此外，使用SiC MOSFET时，由于所有元件（电感器、滤波器等）的尺寸都更小，因此整体产品尺寸也更紧凑。

onsemi's Silicon Carbide(SiC) bare dies are optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.

Our SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses. SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).

Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure. SiC combo-FETs represent a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, such as Power Supply Units (PSUs), downstream high-voltage DC-DC converters for AI Data Center Racks, Solid-State Circuit Breakers (SSCBs), EV battery disconnects, and surge protection, these combo-FETs allow users to access the JFET gate for optimized design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction exceeding 25% compared to discrete implementations.