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Silicon Carbide (SiC) JFETs | UJ3N065025K3S
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The UJ3N065025K3S is a 650V, 25 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
- Over Current Protection Circuits
- DC-AC Inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
- Operating temperature: 175°C (max)
- Extremely fast switching not dependent on temperature
- Low gate charge and intrinsic capacitance
- RoHS compliant
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