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全新行业开创性PLECS模型自助生成工具和Elite Power仿真工具，准确的仿真结果，软硬开关皆可适用
相关产品:
- NTC040N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die
- NTH4L020N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
- NTBG014N120M3P: Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
- NVXK2TR80WDT: EliteSiC Power Module for OBC, 80mΩ, 1200V, 20 A, Dual H-Bridge, in APM32 Series
- NXH008T120M3F2PTHG: Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
- NXH040P120MNF1: SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET
- NXH80B120MNQ0: Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode
- NTBG023N065M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
- NTBG030N120M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L
- NTBL045N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL
- NTBG040N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L
- NTBG070N120M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, D2PAK-7L
- NTHL080N120SC1A: Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
- NTH4L015N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
- NTH4L040N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
- NTBG020N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
- NTBG015N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
- NTHL045N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
- NVVR26A120M1WSS: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs
- NVVR26A120M1WST: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, 90° Power Tabs
- NTH4L014N120M3P: Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L
- NXH020F120MNF1: SiC Module, 4-PACK Full Bridge Topology, 1200 V, 20 mohm M1 SiC MOSFET
- NTH4L075N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L
- NTH4L060N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
- NXH40B120MNQ0: Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode
- NTHL030N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L
- NXH40B120MNQ1: Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode
- NTBG1000N170M1: Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
- NTHL040N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
- NTBG020N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L
- NTHL070N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L
- NVVR26A120M1WSB: Silicon Carbine (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Cooling, 2.6mΩ Rds_on, 1200 V, Half-Bridge, Straight Power Tabs
- NVXR22S90M2SPB: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 2.2mOhm, 900V, 6-Pack
- NTBG028N170M1: Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L
- NTH4L030N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L
- NTHL020N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L
- NXH003P120M3F2PTNG: Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
- NXH010P120MNF1: SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET
- NTHL025N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
- NVXR22S90M2SPC: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 2.2mOhm, 900V, 6-Pack
- NTBG080N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
- NXH004P120M3F2PTNG: Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
- NXH020U90MNF2: SiC Modules, Vienna Module 900V, 2 x 10 mohm SiC MOSFET, 1200V, 2 x 100A, F2 Package
- NTBG040N120M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L
- NTBG022N120M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
- NXH010P90MNF1: SiC Module, 2-PACK Half Bridge Topology, 900 V, 10 mohm SiC M2 MOSFET
- NTH4L160N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
- NTBG032N065M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L
- NTBG060N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
- NTH4L020N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
- NTBG045N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L
- NVXR17S90M2SPC: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 1.7mOhm, 900V, 6-Pack
- NTH4L025N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L
- NTHL020N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-3L
- NVXR17S90M2SPB: Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single Side Direct Cooling, 1.7mOhm, 900V, 6-Pack
- NXH020P120MNF1: SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET
- NVXK2KR80WDT: EliteSiC Power Module for OBC, 80mΩ, 1200V, Vienna Rectifier, in APM32 Series
- NTBG025N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L
- NTH4L070N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L
- NTHL075N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L
- NTHL022N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L
- NTBG160N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
- NTHL060N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L
- NTHL060N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-3L
- NTHL040N120M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L
- NVXK2TR40WXT: EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series
- NTH4L028N170M1: Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
- NTH4L045N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
- NTHL023N065M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L
- NTH4L040N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L
- NXH040F120MNF1: SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm M1 SiC MOSFET
- NXH003P120M3F2PTHG: Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
- NXH004P120M3F2PTHG: Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
- NTHL032N065M3S: Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
- NTH4L080N120SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
- NXH006P120MNF2: Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 Package
- NTH4L022N120M3S: Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
- NTBG060N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L
- NTH4L060N090SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L
- NTHL015N065SC1: Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L